Semiconductor Tunnel Diode Valley Current Calculator
Extract actual independently isolated tunnel-diode valley branch extrema and all tied bias positions; no peak-to-valley scalar ratio, global branch isolation assumption or bias operation.
Description
A tunnel-diode valley is an extremum within an independently isolated branch.
A tunnel-diode valley is an extremum within an independently isolated branch.1
This tool reports the lowest measured current and every tied bias position.
When to use Semiconductor Tunnel Diode Valley Current Calculator
Use this tool when you need to locate a sampled branch maximum or minimum with all ties. Prepare measured device or specimen records under independently matched branch, temperature, frame, and unit conventions.
How to use Semiconductor Tunnel Diode Valley Current Calculator and understand its results
- Prepare measured device or specimen records under independently matched branch, temperature, frame, and unit conventions.
- Enter observedTunnelBiasV, observedBranchCurrentAmps, following the field table and rules below, then run the tool.
- Read observedTunnelValleyCurrentAmps, observedTunnelValleyBiasVoltages. Use the output meanings below to interpret units, signs, flags, and any nested result fields.
- Correct reported input issues and run again. For a successful result, check the stated evidence coverage and assumptions before using it in your review.
| Input field | Meaning | Value type | Requirement |
|---|---|---|---|
| observedTunnelBiasV | Observed tunnel bias v | list of number | Required |
| observedBranchCurrentAmps | Observed branch current amps | list of number | Required |
Enter a nonempty aligned coordinate and response list with coordinates strictly increasing; a single sample is allowed by this helper. Take the maximum or minimum response as specified below and retain every coordinate tied by exact numeric equality. This returns a sampled extremum, not a continuous fitted peak between samples.
value=max(response) or min(response); coordinates={x_i:y_i=value} Symbols follow the input and output meanings and the calculation rules above.
Use the minimum sampled nonnegative current; tied bias voltages are retained.
| Output field | Meaning | Value type |
|---|---|---|
| observedTunnelValleyCurrentAmps | Observed tunnel valley current amps | number |
| observedTunnelValleyBiasVoltages | Observed tunnel valley bias voltages | list of number |
{
"input": {
"observedTunnelBiasV": [
0,
1,
2
],
"observedBranchCurrentAmps": [
1,
3,
2
]
},
"output": {
"observedTunnelValleyCurrentAmps": 1,
"observedTunnelValleyBiasVoltages": [
0
]
}
}Limitations and assumptions
Branch selection and measurement completeness are supplied facts. Ties are retained; unsampled peaks and global material extrema are not inferred.
Missing required fields, unknown fields, wrong types, and violated calculation rules are input issues. Numeric values must be finite; nonfinite results are rejected. Evidence arrays must be dense, with no missing cells. Numeric observation lists allow at most 10,000 entries, subject to any smaller bounds stated above.
Alternative or Complementary methods
For a related review, use Semiconductor Tunnel Diode Peak Current Calculator: A tunnel-diode peak is an extremum within an independently isolated branch. This tool reports the highest measured current and every tied bias position. For a complementary step, use Semiconductor Resonant Tunneling Diode Negative Differential Resistance Calculator: Negative differential resistance is a local signed voltage change divided by current change. Segment measurements reveal negative branches without treating the whole device as a single resistor.
References
Similar or alternative tools
- Semiconductor Tunnel Diode Peak Current Calculator
A tunnel-diode peak is an extremum within an independently isolated branch. This tool reports the highest measured current and every tied bias position.
- Semiconductor Resonant Tunneling Diode Negative Differential Resistance Calculator
Negative differential resistance is a local signed voltage change divided by current change. Segment measurements reveal negative branches without treating the whole device as a single resistor.