Semiconductor Resonant Tunneling Diode Negative Differential Resistance Calculator
Extract actual finite-segment signed RTD differential resistance and negative branch witnesses, not peak-to-valley ratio or global equivalent circuit.
Description
Negative differential resistance is a local signed voltage change divided by current change.
Negative differential resistance is a local signed voltage change divided by current change.1
Segment measurements reveal negative branches without treating the whole device as a single resistor.
When to use Semiconductor Resonant Tunneling Diode Negative Differential Resistance Calculator
Use this tool when you need to reproduce the stated calculation from measured records or independently selected model inputs. Prepare measured device or specimen records under independently matched branch, temperature, frame, and unit conventions.
How to use Semiconductor Resonant Tunneling Diode Negative Differential Resistance Calculator and understand its results
- Prepare measured device or specimen records under independently matched branch, temperature, frame, and unit conventions.
- Enter observedRtdBiasV, observedRtdDrainAmps, following the field table and rules below, then run the tool.
- Read localDifferentialResistanceOhm, negativeDifferentialSegmentIndices. Use the output meanings below to interpret units, signs, flags, and any nested result fields.
- Correct reported input issues and run again. For a successful result, check the stated evidence coverage and assumptions before using it in your review.
| Input field | Meaning | Value type | Requirement |
|---|---|---|---|
| observedRtdBiasV | Observed rtd bias v | list of number | Required |
| observedRtdDrainAmps | Observed rtd drain amps | list of number | Required |
Use at least two strictly increasing bias voltages and aligned nonnegative drain currents. Every adjacent current difference must be nonzero. Divide each voltage increment by its signed current difference; return all resistances and indices with negative values.
Rdiff_i=(V_(i+1)−V_i)/(I_(i+1)−I_i) Symbols follow the input and output meanings and the calculation rules above.
| Output field | Meaning | Value type |
|---|---|---|
| localDifferentialResistanceOhm | Local differential resistance ohm | list of number |
| negativeDifferentialSegmentIndices | Negative differential segment indices | list of number |
{
"input": {
"observedRtdBiasV": [
0,
1,
2
],
"observedRtdDrainAmps": [
1,
3,
2
]
},
"output": {
"localDifferentialResistanceOhm": [
0.5,
-1
],
"negativeDifferentialSegmentIndices": [
1
]
}
}Limitations and assumptions
Matched measurement branch, material state, calibration, and conventions must be independently established. Results do not certify device performance or operating conditions.
Missing required fields, unknown fields, wrong types, and violated calculation rules are input issues. Numeric values must be finite; nonfinite results are rejected. Evidence arrays must be dense, with no missing cells. Numeric observation lists allow at most 10,000 entries, subject to any smaller bounds stated above.
Alternative or Complementary methods
For a related review, use Semiconductor Tunnel Diode Valley Current Calculator: A tunnel-diode valley is an extremum within an independently isolated branch. This tool reports the lowest measured current and every tied bias position. For a complementary step, use Semiconductor Tunnel Diode Peak Current Calculator: A tunnel-diode peak is an extremum within an independently isolated branch. This tool reports the highest measured current and every tied bias position.
References
Similar or alternative tools
- Semiconductor Tunnel Diode Valley Current Calculator
A tunnel-diode valley is an extremum within an independently isolated branch. This tool reports the lowest measured current and every tied bias position.
- Semiconductor Tunnel Diode Peak Current Calculator
A tunnel-diode peak is an extremum within an independently isolated branch. This tool reports the highest measured current and every tied bias position.