Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.

Via height (µm)

Required number in µm.

Via radius (µm)

Required number in µm.

Resistivity (Ω·m)

Optional number in Ω·m. Conductor resistivity; the default is bulk copper near 20 °C.

The cited overview of Via (electronics) supplies background for the terminology and domain context used by this tool.^[1]

Compute the DC resistance of a cylindrical copper through-silicon via from its height and radius. Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.

Via resistance (mΩ)

Returned number in mΩ.

• Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
• Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.

Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.

• TSV Capacitance Calculator

  Estimate the cylindrical oxide capacitance of a through-silicon via from its radius, oxide thickness, height, and dielectric permittivity.

• TSV Keep-Out Zone Calculator

  Compute the placement keep-out zone around a through-silicon via from its pitch and a keep-out ratio. Keep-out = pitch × ratio.

• Interposer Line Resistance Calculator

  Compute the DC resistance of a copper interposer or redistribution line from its length, width, and metal thickness.