• Convert TSV pitch and a chosen pitch ratio into a placement keep-out distance for early 3D-IC floorplanning.
• Compare fabrication or device scenarios while holding coefficients and unit conventions constant.
• Check a hand calculation before moving to a higher-fidelity process, circuit, or TCAD model.

The ratio is a design-policy input, not a material property calculated from TSV stress.

• Use mechanical simulation or measured stress contours when transistor orientation, TSV diameter, liner, anneal history, or silicon anisotropy matters.
• Use parameters measured for the same material, geometry, temperature, and operating regime whenever the result informs engineering work.

• TSV Resistance

  Use TSV Resistance to compute the DC resistance of a cylindrical copper through-silicon via from its height and radius. Choose this tool when you need to convert TSV pitch and a chosen pitch ratio into a placement keep-out distance for early 3D-IC floorplanning.

• TSV Capacitance

  Use TSV Capacitance to estimate the cylindrical oxide capacitance of a through-silicon via from its radius, oxide thickness, height, and dielectric permittivity. Choose this tool when you need to convert TSV pitch and a chosen pitch ratio into a placement keep-out distance for early 3D-IC floorplanning.