Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.

Via radius (µm)

Required number in µm.

Oxide thickness (µm)

Required number in µm.

Via height (µm)

Required number in µm.

Relative permittivity

Optional number.

The cited overview of Via (electronics) supplies background for the terminology and domain context used by this tool.^[1]

Estimate the cylindrical oxide capacitance of a through-silicon via from its radius, oxide thickness, height, and dielectric permittivity. Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.

Capacitance (fF)

Returned number in fF.

• Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
• Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.

Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.

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