Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.

Channel width (nm)

Required number in nm. Actual channel width.

Minimum channel width (nm)

Required number in nm. Technology minimum channel width.

Narrow-width coefficient (mV)

Required number in mV. Narrow-width coefficient in millivolts.

The cited overview of Semiconductor device supplies background for the terminology and domain context used by this tool.^[1]

Estimate the positive threshold-voltage shift caused by the narrow width effect relative to the minimum channel width. Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.

Threshold shift (mV)

Returned number in mV. Positive threshold-voltage shift in millivolts.

• Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
• Channel width must be at least 0.
• Minimum channel width must be at least 0.
• Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.

Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.

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