Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.

Body coefficient (mV/V)

Required number in mV/V. Kink shift per volt of excess drain bias.

Drain voltage (V)

Required number in V. Drain voltage of the floating-body device.

Saturation voltage (V)

Required number in V. Drain saturation voltage of the device.

The cited overview of Semiconductor device supplies background for the terminology and domain context used by this tool.^[1]

Estimate the floating-body kink threshold-voltage shift from the excess drain bias beyond saturation. Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.

Kink shift (mV)

Returned number in mV. Kink-induced threshold voltage shift.

• Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
• Body coefficient must be at least 0.
• Drain voltage must be at least 0.
• Saturation voltage must be at least 0.
• Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.

Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.

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