Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.

VSB (V)

Required number in V. Source-to-body reverse bias.

Gamma (V^0.5)

Required number in V^0.5. Body-effect coefficient.

φF (V)

Required number in V. Fermi potential phiF in volts.

The cited overview of MOSFET supplies background for the terminology and domain context used by this tool.^[1]

Compute the MOSFET threshold-voltage shift caused by source-body reverse bias. Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.

ΔVT (V)

Returned number in V. Threshold-voltage increase caused by the body effect.

• Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
• VSB must be at least 0.
• Gamma must be at least 5e-324.
• φF must be at least 0.
• Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.

Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.

• MOSFET Threshold Voltage Body Effect Calculator

  Compute threshold voltage with source-body reverse bias applied.

• Floating Body Kink Shift Calculator

  Estimate the floating-body kink threshold-voltage shift from the excess drain bias beyond saturation.

• DIBL Coefficient Calculator

  Compute the DIBL coefficient from the threshold voltage shift and the drain voltage change.