Semiconductor Schottky Diode Ideality Factor Vs Temperature Calculator
Audit independently fitted local dV/dlnI at actual multiple temperatures, no paired two-forward-point extrapolation or universal ideality versus T.
Description
An observed local voltage slope per natural-log current can be normalized by thermal voltage to obtain ideality factor.
An observed local voltage slope per natural-log current can be normalized by thermal voltage to obtain ideality factor.1
Matched temperatures and the declared Boltzmann convention define the calculation.
When to use Semiconductor Schottky Diode Ideality Factor Vs Temperature Calculator
Use this tool when you need to reproduce the stated calculation from measured records or independently selected model inputs. Prepare measured device or specimen records under independently matched branch, temperature, frame, and unit conventions.
How to use Semiconductor Schottky Diode Ideality Factor Vs Temperature Calculator and understand its results
- Prepare measured device or specimen records under independently matched branch, temperature, frame, and unit conventions.
- Enter observedTemperaturesKelvin, observedLocalVoltageSlopePerLogCurrentV, callerBoltzmannEvKelvin, following the field table and rules below, then run the tool.
- Read observedIdealityFactorsByTemperature. Use the output meanings below to interpret units, signs, flags, and any nested result fields.
- Correct reported input issues and run again. For a successful result, check the stated evidence coverage and assumptions before using it in your review.
| Input field | Meaning | Value type | Requirement |
|---|---|---|---|
| observedTemperaturesKelvin | Observed temperatures kelvin | list of number | Required |
| observedLocalVoltageSlopePerLogCurrentV | Observed local voltage slope per log current v | list of number | Required |
| callerBoltzmannEvKelvin | Caller boltzmann ev kelvin | number | Required |
Use aligned nonempty positive temperatures in kelvin and positive dV/dln(I) slopes in volts, plus a positive Boltzmann constant in electronvolts per kelvin. Divide each slope by kT. No fit or extrapolation is performed here.
n_i=localVoltageSlope_i/(k_evPerK×T_i) Symbols follow the input and output meanings and the calculation rules above.
| Output field | Meaning | Value type |
|---|---|---|
| observedIdealityFactorsByTemperature | Observed ideality factors by temperature | list of number |
{
"input": {
"observedTemperaturesKelvin": [
300,
400
],
"observedLocalVoltageSlopePerLogCurrentV": [
0.06,
0.08
],
"callerBoltzmannEvKelvin": 0.0001
},
"output": {
"observedIdealityFactorsByTemperature": [
1.9999999999999998,
2
]
}
}Limitations and assumptions
Matched measurement branch, material state, calibration, and conventions must be independently established. Results do not certify device performance or operating conditions.
Missing required fields, unknown fields, wrong types, and violated calculation rules are input issues. Numeric values must be finite; nonfinite results are rejected. Evidence arrays must be dense, with no missing cells. Numeric observation lists allow at most 10,000 entries, subject to any smaller bounds stated above.
Alternative or Complementary methods
For a related review, use Semiconductor Schottky Diode Barrier Height Inhomogeneity Calculator: A Gaussian Schottky barrier-distribution model reduces apparent barrier height by a variance term over temperature. Its mean and spread must come from an independently justified distribution. For a complementary step, use Semiconductor Tunnel Fet Subthreshold Swing Calculator: Local TFET subthreshold swing measures gate-voltage change per decade of current along a selected tunneling branch. Segment values reveal variation that a single global slope can hide.
References
Similar or alternative tools
- Semiconductor Schottky Diode Barrier Height Inhomogeneity Calculator
A Gaussian Schottky barrier-distribution model reduces apparent barrier height by a variance term over temperature. Its mean and spread must come from an independently justified distribution.
- Semiconductor Tunnel Fet Subthreshold Swing Calculator
Local TFET subthreshold swing measures gate-voltage change per decade of current along a selected tunneling branch. Segment values reveal variation that a single global slope can hide.