Semiconductor Schottky Diode Barrier Height Inhomogeneity Calculator
Evaluate explicit Gaussian Schottky barrier-distribution apparent height mean−variance/(2kT); not ideal work-function/affinity subtraction or automatic barrier extraction.
Description
A Gaussian Schottky barrier-distribution model reduces apparent barrier height by a variance term over temperature.
A Gaussian Schottky barrier-distribution model reduces apparent barrier height by a variance term over temperature.1
Its mean and spread must come from an independently justified distribution.
When to use Semiconductor Schottky Diode Barrier Height Inhomogeneity Calculator
Use this tool when you need to reproduce the stated calculation from measured records or independently selected model inputs. Prepare measured device or specimen records under independently matched branch, temperature, frame, and unit conventions.
How to use Semiconductor Schottky Diode Barrier Height Inhomogeneity Calculator and understand its results
- Prepare measured device or specimen records under independently matched branch, temperature, frame, and unit conventions.
- Enter callerBarrierMeanEv, callerBarrierStdDevEv, observedTemperatureKelvin, callerBoltzmannEvKelvin, following the field table and rules below, then run the tool.
- Read modeledGaussianApparentBarrierEv. Use the output meanings below to interpret units, signs, flags, and any nested result fields.
- Correct reported input issues and run again. For a successful result, check the stated evidence coverage and assumptions before using it in your review.
| Input field | Meaning | Value type | Requirement |
|---|---|---|---|
| callerBarrierMeanEv | Caller barrier mean ev | number | Required |
| callerBarrierStdDevEv | Caller barrier std dev ev | number | Required |
| observedTemperatureKelvin | Observed temperature kelvin | number | Required |
| callerBoltzmannEvKelvin | Caller boltzmann ev kelvin | number | Required |
Use a finite signed mean barrier in electronvolts, nonnegative standard deviation in electronvolts, and positive Kelvin temperature and Boltzmann constant in electronvolts per kelvin. Subtract variance divided by twice kT. A negative modeled height is retained.
φ_apparent=φ_mean−σ²/(2kT) Symbols follow the input and output meanings and the calculation rules above.
| Output field | Meaning | Value type |
|---|---|---|
| modeledGaussianApparentBarrierEv | Modeled gaussian apparent barrier ev | number |
{
"input": {
"callerBarrierMeanEv": 1,
"callerBarrierStdDevEv": 0.1,
"observedTemperatureKelvin": 300,
"callerBoltzmannEvKelvin": 0.0001
},
"output": {
"modeledGaussianApparentBarrierEv": 0.8333333333333333
}
}Limitations and assumptions
Matched measurement branch, material state, calibration, and conventions must be independently established. Results do not certify device performance or operating conditions.
Missing required fields, unknown fields, wrong types, and violated calculation rules are input issues. Numeric values must be finite; nonfinite results are rejected.
Alternative or Complementary methods
For a related review, use Semiconductor Schottky Diode Ideality Factor Vs Temperature Calculator: An observed local voltage slope per natural-log current can be normalized by thermal voltage to obtain ideality factor. Matched temperatures and the declared Boltzmann convention define the calculation. For a complementary step, use Semiconductor Sic Mosfet Body Diode Forward Voltage Calculator: SiC body-diode forward voltage depends on the matched current and temperature branch. This reader interpolates supplied measurements without extracting an ideal diode model.
References
Similar or alternative tools
- Semiconductor Schottky Diode Ideality Factor Vs Temperature Calculator
An observed local voltage slope per natural-log current can be normalized by thermal voltage to obtain ideality factor. Matched temperatures and the declared Boltzmann convention define the calculation.
- Semiconductor Sic Mosfet Body Diode Forward Voltage Calculator
SiC body-diode forward voltage depends on the matched current and temperature branch. This reader interpolates supplied measurements without extracting an ideal diode model.