Semiconductor Tunnel Fet Subthreshold Swing Calculator
Audit local measured TFET swing per actual current decade, not global fitted ferroelectric slope or theoretical thermal MOS swing; caller independently verifies monotone tunneling branch.
Description
Local TFET subthreshold swing measures gate-voltage change per decade of current along a selected tunneling branch.
Local TFET subthreshold swing measures gate-voltage change per decade of current along a selected tunneling branch.1
Segment values reveal variation that a single global slope can hide.
When to use Semiconductor Tunnel Fet Subthreshold Swing Calculator
Use this tool when you need to reproduce the stated calculation from measured records or independently selected model inputs. Prepare measured device or specimen records under independently matched branch, temperature, frame, and unit conventions.
How to use Semiconductor Tunnel Fet Subthreshold Swing Calculator and understand its results
- Prepare measured device or specimen records under independently matched branch, temperature, frame, and unit conventions.
- Enter observedTfetGateV, observedTfetCurrentAmps, following the field table and rules below, then run the tool.
- Read segmentTfetSwingVoltsDecade, minimumMeasuredTfetSwingVoltsDecade. Use the output meanings below to interpret units, signs, flags, and any nested result fields.
- Correct reported input issues and run again. For a successful result, check the stated evidence coverage and assumptions before using it in your review.
| Input field | Meaning | Value type | Requirement |
|---|---|---|---|
| observedTfetGateV | Observed tfet gate v | list of number | Required |
| observedTfetCurrentAmps | Observed tfet current amps | list of number | Required |
Use at least two aligned strictly increasing gate voltages and positive strictly increasing currents. Divide each voltage increment by log10 of the current ratio. Return every segment and their minimum in volts per decade. The result is not millivolts unless multiplied by 1000 externally.
swing_i=(V_(i+1)−V_i)/log10(I_(i+1)/I_i) Symbols follow the input and output meanings and the calculation rules above.
| Output field | Meaning | Value type |
|---|---|---|
| segmentTfetSwingVoltsDecade | Segment tfet swing volts decade | list of number |
| minimumMeasuredTfetSwingVoltsDecade | Minimum measured tfet swing volts decade | number |
{
"input": {
"observedTfetGateV": [
0,
0.03,
0.08
],
"observedTfetCurrentAmps": [
1,
10,
100
]
},
"output": {
"segmentTfetSwingVoltsDecade": [
0.03,
0.05
],
"minimumMeasuredTfetSwingVoltsDecade": 0.03
}
}Limitations and assumptions
Matched measurement branch, material state, calibration, and conventions must be independently established. Results do not certify device performance or operating conditions.
Missing required fields, unknown fields, wrong types, and violated calculation rules are input issues. Numeric values must be finite; nonfinite results are rejected. Evidence arrays must be dense, with no missing cells. Numeric observation lists allow at most 10,000 entries, subject to any smaller bounds stated above.
Alternative or Complementary methods
For a related review, use Semiconductor Tunnel Fet On Current Calculator: TFET on-current readings belong to a chosen gate-current branch under matched drain conditions. This tool interpolates measured branch data and reports a local derivative. For a complementary step, use Semiconductor Schottky Diode Ideality Factor Vs Temperature Calculator: An observed local voltage slope per natural-log current can be normalized by thermal voltage to obtain ideality factor. Matched temperatures and the declared Boltzmann convention define the calculation.
References
Similar or alternative tools
- Semiconductor Tunnel Fet On Current Calculator
TFET on-current readings belong to a chosen gate-current branch under matched drain conditions. This tool interpolates measured branch data and reports a local derivative.
- Semiconductor Schottky Diode Ideality Factor Vs Temperature Calculator
An observed local voltage slope per natural-log current can be normalized by thermal voltage to obtain ideality factor. Matched temperatures and the declared Boltzmann convention define the calculation.