Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.

Electric field (V/cm)

Required number in V/cm. Electric field at the emitting surface.

Relative permittivity

Required number. Relative permittivity of the semiconductor.

The cited overview of Schottky barrier supplies background for the terminology and domain context used by this tool.^[1]

Compute the Schottky effect barrier lowering from the electric field and the semiconductor relative permittivity. Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.

Barrier lowering (eV)

Returned number in eV. Schottky barrier lowering.

• Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
• Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.

Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.

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