Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.

Drain-voltage change (V)

Required number in V. Difference between the two drain voltages used for the measurement.

Threshold-shift magnitude (mV)

Required number in mV. Threshold voltage shift caused by DIBL.

The cited overview of MOSFET supplies background for the terminology and domain context used by this tool.^[1]

Compute the DIBL coefficient from the threshold voltage shift and the drain voltage change. Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.

DIBL coefficient (mV/V)

Returned number in mV/V. DIBL coefficient in millivolts per volt of drain voltage.

• Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
• Drain-voltage change must be at least 5e-324.
• Threshold-shift magnitude must be at least 0.
• Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.

Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.

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