Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.

Electric field (MV/cm)

Required number in MV/cm. Electric field in the depletion region.

The cited overview of Semiconductor device supplies background for the terminology and domain context used by this tool.^[1]

Compute the silicon impact ionization coefficient from the electric field using the Chynoweth law. Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.

Ionization coefficient (cm^-1)

Returned number in cm^-1. Impact ionization coefficient alpha.

• Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
• Electric field must be at least 5e-324.
• Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.

Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.

• Conductivity From Doping Calculator

  Compute the silicon conductivity of uniformly doped material from majority-carrier mobility at 300 K. Assumes low-field Caughey-Thomas mobility and complete ionization.

• Resistivity From Doping Calculator

  Compute the silicon resistivity of uniformly doped material from majority-carrier mobility at 300 K. Assumes low-field Caughey-Thomas mobility and complete ionization.

• SiGe Lattice Mismatch Calculator

  Compute relaxed SiGe lattice mismatch relative to silicon using Vegard's law with aGe = 5.658 angstrom and aSi = 5.431 angstrom.