Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.

Metal work function (eV)

Required number in eV. Metal work function.

Electron affinity (eV)

Required number in eV. Semiconductor electron affinity.

The cited overview of Schottky barrier supplies background for the terminology and domain context used by this tool.^[1]

Subtract the semiconductor electron affinity from the metal work function to get the ideal Schottky barrier height. Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.

Barrier height (eV)

Returned number in eV. Ideal n-type Schottky-Mott barrier height; a negative result indicates that this idealized model predicts no rectifying barrier.

• Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
• Metal work function must be at least 0.
• Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.

Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.

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