Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.

Total thickness (nm)

Required number in nm. Total ALD film thickness after all cycles. Must be at least 0 nm; 0 yields 0 nm/cycle.

Cycle count

Required integer. Number of completed ALD cycles. Must be an integer at least 1.

The cited overview of Semiconductor device supplies background for the terminology and domain context used by this tool.^[1]

Divide the total ALD film thickness (final minus initial) by the number of cycles to get the average growth per cycle. Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.

Growth per cycle (nm/cycle)

Returned number in nm/cycle. Average ALD growth per cycle over the measured cycles.

• Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
• Total thickness must be at least 0.
• Cycle count must be at least 1.
• Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.

Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.

• CVD Deposition Rate Calculator

  Divide the deposited film thickness (final thickness minus initial thickness) by the process time to get the average CVD deposition rate.

• Epitaxy Growth Rate Calculator

  Divide the grown epitaxial layer thickness (final minus initial) by the deposition time to get the average epitaxy growth rate.

• Etch Rate Calculator

  Divide the removed thickness (initial film thickness minus final film thickness) by the etch time to get the average etch rate.