Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.

Gate work function (eV)

Required number in eV. Gate material work function.

Substrate work function (eV)

Required number in eV. Substrate semiconductor work function.

The cited overview of MOSFET supplies background for the terminology and domain context used by this tool.^[1]

Compute the metal-semiconductor work function difference from gate and substrate work functions. Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.

Phi MS (V)

Returned number in V. Work function difference.

• Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
• Gate work function must be at least 5e-324.
• Substrate work function must be at least 5e-324.
• Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.

Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.

• MOSFET Flatband Voltage Calculator

  Compute the flatband voltage from gate/semiconductor work functions and oxide charge.

• MOSFET SiO₂ Gate Oxide Capacitance Calculator

  Compute ideal SiO₂ gate oxide capacitance per unit area from thickness using Cox = εox/tox and εox = 3.9·ε0.

• MOSFET SiO₂ Oxide Thickness Calculator

  Compute the equivalent SiO₂ gate oxide thickness from capacitance per unit area using εox = 3.9·ε0.