Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.

Total ionizing dose (krad)

Required number in krad. Total accumulated ionizing dose.

Dose response (mV/krad)

Required number in mV/krad. Linear threshold shift per unit dose.

The cited overview of MOSFET supplies background for the terminology and domain context used by this tool.^[1]

Compute the radiation-induced MOSFET threshold-voltage shift from total ionizing dose and a linear dose response. Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.

Threshold shift (mV)

Returned number in mV. Signed threshold-voltage shift.

• Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
• Total ionizing dose must be at least 0.
• Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.

Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.

• DIBL Coefficient Calculator

  Compute the DIBL coefficient from the threshold voltage shift and the drain voltage change.

• MOSFET Body-Effect Shift Calculator

  Compute the MOSFET threshold-voltage shift caused by source-body reverse bias.

• MOSFET Threshold Voltage Body Effect Calculator

  Compute threshold voltage with source-body reverse bias applied.