GIDL Current Calculator
Evaluate a calibrated gate-induced drain-leakage exponential from peak field, characteristic field, and current prefactor.
Description
Evaluate a calibrated gate-induced drain-leakage exponential from peak field, characteristic field, and current prefactor.
GIDL Current Calculator is a focused tool for the following task. Evaluate a calibrated gate-induced drain-leakage exponential from peak field, characteristic field, and current prefactor. It reports GIDL current from the values you provide rather than inventing measurements, coefficients, or professional judgment that are not part of the input.
When to use GIDL Current
Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.
- Characteristic field (MV/cm)
- Required number in MV/cm. Characteristic field obtained from a process-specific GIDL fit.
- Peak drain field (MV/cm)
- Required number in MV/cm. Peak electric field at the drain junction.
- GIDL prefactor (pA)
- Required number in pA. Current prefactor from the same calibrated GIDL fit.
The cited overview of MOSFET supplies background for the terminology and domain context used by this tool.1
How GIDL Current works
Evaluate a calibrated gate-induced drain-leakage exponential from peak field, characteristic field, and current prefactor. Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.
- GIDL current (pA)
- Returned number in pA. Gate-induced drain leakage current.
Limitations and assumptions
- Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
- Characteristic field must be at least 5e-324.
- Peak drain field must be at least 5e-324.
- GIDL prefactor must be at least 5e-324.
- Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.
Alternative or Complementary approaches
Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.
References
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MOSFET — Wikipedia contributors
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