HCI Substrate Current Calculator
Evaluate a calibrated hot-carrier substrate-current model from drain current and drain overdrive above saturation.
Description
Evaluate a calibrated hot-carrier substrate-current model from drain current and drain overdrive above saturation.
HCI Substrate Current Calculator is a focused tool for the following task. Evaluate a calibrated hot-carrier substrate-current model from drain current and drain overdrive above saturation. It reports Substrate current from the values you provide rather than inventing measurements, coefficients, or professional judgment that are not part of the input.
When to use HCI Substrate Current
Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.
- Drain current (mA)
- Required number in mA.
- Drain voltage (V)
- Required number in V.
- Saturation voltage (V)
- Required number in V.
- Proportionality coefficient (nA/mA)
- Optional number in nA/mA. Calibrated current ratio expressed as nanoamperes of substrate current per milliampere of drain current.
- Characteristic voltage (V)
- Optional number in V.
The cited overview of Semiconductor device supplies background for the terminology and domain context used by this tool.1
How HCI Substrate Current works
Evaluate a calibrated hot-carrier substrate-current model from drain current and drain overdrive above saturation. Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.
- Substrate current (nA)
- Returned number in nA.
Limitations and assumptions
- Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
- Drain current must be at least 0.
- Proportionality coefficient must be at least 0.
- Characteristic voltage must be at least 5e-324.
- Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.
Alternative or Complementary approaches
Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.
References
-
Semiconductor device — Wikipedia contributors
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