Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.

Substrate to drain current ratio

Required number. Substrate current divided by drain current under operating bias.

Calibrated coefficient (%/year)

Required number in %/year. Measured process- and bias-dependent rate when the current ratio equals one.

Exponent N

Required number. Power-law exponent N applied to the current ratio.

The cited overview of Semiconductor device supplies background for the terminology and domain context used by this tool.^[1]

Evaluate a calibrated power-law model for hot-carrier-induced parameter drift from the substrate-to-drain current ratio. Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.

Degradation rate (%/year)

Returned number in %/year.

• Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
• Substrate to drain current ratio must be at least 0.
• Calibrated coefficient must be at least 0.
• Exponent N must be at least 5e-324.
• Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.

Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.

• HCI Substrate Current Calculator

  Evaluate a calibrated hot-carrier substrate-current model from drain current and drain overdrive above saturation.

• GIDL Current Calculator

  Evaluate a calibrated gate-induced drain-leakage exponential from peak field, characteristic field, and current prefactor.

• APD Multiplication Factor Calculator

  Compute the avalanche photodiode multiplication factor from the Miller model M=1/[1-(V/Vb)^N]. Inputs are magnitudes: reverse-bias magnitude V≥0 V must remain below breakdown magnitude Vb>0 V (numerator V, denominator Vb; V=0 gives M=1, V→Vb- diverges). Exponent N in [1, 6] (default 2) captures the ionization coefficients. Signed voltages are not supported (use magnitudes). Result M≥1 is a dimensionless factor (per-carrier gain, not total current).