Gate Tunneling Current Calculator
Evaluate a calibrated gate-oxide tunneling current-density exponential from oxide thickness, attenuation, and prefactor.
Description
Evaluate a calibrated gate-oxide tunneling current-density exponential from oxide thickness, attenuation, and prefactor.
Gate Tunneling Current Calculator is a focused tool for the following task. Evaluate a calibrated gate-oxide tunneling current-density exponential from oxide thickness, attenuation, and prefactor. It reports Gate leakage density from the values you provide rather than inventing measurements, coefficients, or professional judgment that are not part of the input.
When to use Gate Tunneling Current
Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.
- Attenuation per nm (1/nm)
- Required number in 1/nm. Exponential attenuation per nanometer from a calibrated tunneling fit.
- Oxide thickness (nm)
- Required number in nm. Gate oxide thickness.
- Tunneling prefactor (pA/um^2)
- Required number in pA/um^2. Current-density prefactor from the same calibrated fit.
The cited overview of MOSFET supplies background for the terminology and domain context used by this tool.1
How Gate Tunneling Current works
Evaluate a calibrated gate-oxide tunneling current-density exponential from oxide thickness, attenuation, and prefactor. Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.
- Gate leakage density (pA/um^2)
- Returned number in pA/um^2. Gate tunneling leakage current density.
Limitations and assumptions
- Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
- Attenuation per nm must be at least 5e-324.
- Oxide thickness must be at least 5e-324.
- Tunneling prefactor must be at least 5e-324.
- Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.
Alternative or Complementary approaches
Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.
References
-
MOSFET — Wikipedia contributors
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