Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.

Source Ohms (Ω)

Required number in Ω.

Channel Ohms (Ω)

Required number in Ω.

Drift Ohms (Ω)

Required number in Ω.

Substrate Ohms (Ω)

Required number in Ω.

Contact Ohms (Ω)

Required number in Ω.

The cited overview of Semiconductor device supplies background for the terminology and domain context used by this tool.^[1]

Total VDMOS on-resistance from measured or modeled positive series resistance components at the same operating temperature. Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.

On Ohms (Ω)

Returned number in Ω.

• Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
• Source Ohms must be at least 0.
• Channel Ohms must be at least 0.
• Drift Ohms must be at least 0.
• Substrate Ohms must be at least 0.
• Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.

Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.

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  Extract the diode ideality factor n from two forward-bias points on the exponential Shockley relation. Formula: n = (V2 - V1) / (Vt·ln(I2/I1)), where thermal voltage Vt = k·T/q (k=1.380649e-23 J/K, q=1.602176634e-19 C). Inputs: I1>0 mA, I2>0 mA and I1≠I2, V1 and V2 finite V, T>0 K (default 300 K). Output: n>0 (physical diode typically 1 ≤ n ≤ 2; n=1 ideal diffusion, n≈2 recombination/generation; n outside 1-2 indicates series resistance, high injection, or measurement error). Assumes forward exponential region, negligible series resistance, and constant temperature.

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  Resistive RAM high-to-low state resistance ratio measured at the same non-disturbing read voltage.