APD Breakdown Voltage Temperature Shift Calculator
Shift an APD breakdown voltage to operating temperature using the linear temperature coefficient model V(T)=Vref·[1+0.0011·(T-25 °C)]. Valid for reference breakdown Vref>0 V defined at 25 °C and junction temperature T in [-55, 175] °C inclusive; outside this range the 0.11%/°C linear approximation degrades. Vref is the breakdown magnitude (positive, not signed). Result is the breakdown magnitude at temperature. Device-specific tempco may vary.
Description
Shift an APD breakdown voltage to operating temperature using the linear temperature coefficient model V(T)=Vref·[1+0.0011·(T-25 °C)]. Valid for reference breakdown Vref>0 V defined at 25 °C and junction temperature T in [-55, 175] °C inclusive; outside this range the 0.11%/°C linear approximation degrades. Vref is the breakdown magnitude (positive, not signed). Result is the breakdown magnitude at temperature. Device-specific tempco may vary.
APD Breakdown Voltage Temperature Shift Calculator is a focused tool for the following task. Shift an APD breakdown voltage to operating temperature using the linear temperature coefficient model V(T)=Vref·[1+0.0011·(T-25 °C)]. Valid for reference breakdown Vref>0 V defined at 25 °C and junction temperature T in [-55, 175] °C inclusive; outside this range the 0.11%/°C linear approximation degrades. Vref is the breakdown magnitude (positive, not signed). Result is the breakdown magnitude at temperature. Device-specific tempco may vary. It reports Breakdown at temperature from the values you provide rather than inventing measurements, coefficients, or professional judgment that are not part of the input.
When to use APD Breakdown Voltage Temperature Shift
Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.
- Reference breakdown (V)
- Required number in V. Breakdown voltage at the 25 °C reference. Must be greater than 0 V; magnitude only (signed voltages not supported).
- Temperature (°C)
- Required number in °C. Junction temperature. Must be in [-55, 175] °C inclusive; linear model only.
The cited overview of Photodiode supplies background for the terminology and domain context used by this tool.1
How APD Breakdown Voltage Temperature Shift works
Shift an APD breakdown voltage to operating temperature using the linear temperature coefficient model V(T)=Vref·[1+0.0011·(T-25 °C)]. Valid for reference breakdown Vref>0 V defined at 25 °C and junction temperature T in [-55, 175] °C inclusive; outside this range the 0.11%/°C linear approximation degrades. Vref is the breakdown magnitude (positive, not signed). Result is the breakdown magnitude at temperature. Device-specific tempco may vary. Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.
- Breakdown at temperature (V)
- Returned number in V. Breakdown voltage at the requested temperature. At least 0 V; multiply by area or current for total power.
Limitations and assumptions
- Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
- Reference breakdown must be at least 5e-324.
- Temperature must be at least -55.
- Temperature must be no greater than 175.
- Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.
Alternative or Complementary approaches
Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.
References
-
Photodiode — Wikipedia contributors
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