Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.

On Ohms (Ω)

Required number in Ω.

Active Area Square Centimeters (cm²)

Required number in cm².

The cited overview of MOSFET supplies background for the terminology and domain context used by this tool.^[1]

Trench MOSFET area-specific on-resistance from measured device on-resistance and active die area. Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.

Specific On Ohm Square Centimeters (Ω·cm²)

Returned number in Ω·cm².

• Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
• On Ohms must be at least 0.
• Active Area Square Centimeters must be at least 0.
• Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.

Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.

• Defect Density from Yield

  Infer defect density from measured chip yield and die area using the Poisson yield model. Formula: D0 [cm^-2] = -ln(Y [%]/100) / A [cm²], where Y is the measured die yield and A is the die area. Inputs: 0 < Y < 100 %, A > 0 cm². Output: D0 ≥ 0 cm^-2. Assumes uniformly random defects, Poisson statistics, and that every defect kills a die.

• Specific Contact Resistivity Calculator

  Calculate specific contact resistivity from measured contact resistance, contact width, and transfer length using the transmission-line relation rho-c = Rc W LT.

• APD Breakdown Voltage Temperature Shift Calculator

  Shift an APD breakdown voltage to operating temperature using the linear temperature coefficient model V(T)=Vref·[1+0.0011·(T-25 °C)]. Valid for reference breakdown Vref>0 V defined at 25 °C and junction temperature T in [-55, 175] °C inclusive; outside this range the 0.11%/°C linear approximation degrades. Vref is the breakdown magnitude (positive, not signed). Result is the breakdown magnitude at temperature. Device-specific tempco may vary.