Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.

Test time (s)

Required number in s. Cumulative gate oxide stress duration.

Characteristic life (s)

Required number in s. Weibull characteristic life at which 63.2 percent fail.

Shape beta

Required number. Weibull shape parameter controlling the failure rate trend.

The cited overview of Semiconductor device supplies background for the terminology and domain context used by this tool.^[1]

Compute the time dependent dielectric breakdown failed fraction from stress time using a two-parameter Weibull model. Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.

Failure fraction

Returned number.

• Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
• Test time must be at least 0.
• Characteristic life must be at least 0.
• Shape beta must be at least 0.
• Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.

Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.

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