• Calculate AlxGa1−xN bandgap from aluminum mole fraction with GaN and AlN endpoints and a 1.0 eV bowing parameter.
• Compare fabrication or device scenarios while holding coefficients and unit conventions constant.
• Check a hand calculation before moving to a higher-fidelity process, circuit, or TCAD model.

The bowing term makes the alloy gap lower than straight endpoint interpolation for intermediate compositions.

• Endpoint gaps and bowing vary with crystal phase, temperature, strain, and source; this calculator fixes all four.
• Use parameters measured for the same material, geometry, temperature, and operating regime whenever the result informs engineering work.

• InGaAs Bandgap

  Use InGaAs Bandgap to compute the InGaAs band gap energy by linear interpolation between InAs at 0.354 eV and GaAs at 1.42 eV. Choose this tool when you need to calculate AlxGa1−xN bandgap from aluminum mole fraction with GaN and AlN endpoints and a 1.0 eV bowing parameter.

• SiGe Bandgap

  Use SiGe Bandgap to compute the relaxed SiGe band gap energy from the germanium mole fraction using a documented quadratic interpolation. Choose this tool when you need to calculate AlxGa1−xN bandgap from aluminum mole fraction with GaN and AlN endpoints and a 1.0 eV bowing parameter.