Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.

Aluminum fraction x

Required number. Aluminum mole fraction x in Al_x Ga_(1-x) N. Must be between 0 and 1, inclusive.

The cited overview of Band gap supplies background for the terminology and domain context used by this tool.^[1]

Compute the AlGaN band gap energy from the aluminum fraction using linear interpolation with a documented bowing parameter of 1.0 eV. Eg(x) = (1-x)*3.42 + x*6.25 - x*(1-x)*1.0. Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.

Band gap energy (eV)

Returned number in eV. Band gap energy between approximately 3.42 eV (GaN) and 6.25 eV (AlN), greater than 0 eV.

• Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
• Aluminum fraction x must be at least 0.
• Aluminum fraction x must be no greater than 1.
• Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.

Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.

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