SEL Cross Section Calculator

Compute the single-event latchup cross section from LET using a Weibull-style saturation curve.

Description

Compute the single-event latchup cross section from LET using a Weibull-style saturation curve.

SEL Cross Section Calculator is a focused tool for the following task. Compute the single-event latchup cross section from LET using a Weibull-style saturation curve. It reports Cross section from the values you provide rather than inventing measurements, coefficients, or professional judgment that are not part of the input.

When to use SEL Cross Section

Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.

LET (MeV·cm²/mg): Required number in MeV·cm²/mg. Linear energy transfer of the incident ion.
Saturation cross section (um^2): Required number in um^2. Saturation cross section reached at high LET.
Threshold LET (MeV·cm²/mg): Required number in MeV·cm²/mg. Threshold LET where latchup becomes possible.
Shape exponent: Optional number. Dimensionless Weibull shape exponent.
Width parameter (MeV·cm²/mg): Required number in MeV·cm²/mg. Width parameter controlling the rise of the curve.

The cited overview of Semiconductor device supplies background for the terminology and domain context used by this tool.^[1]

How SEL Cross Section works

Compute the single-event latchup cross section from LET using a Weibull-style saturation curve. Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.

Cross section (um^2): Returned number in um^2. Latchup cross section at the given LET.

Limitations and assumptions

Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
LET must be at least 0.
Threshold LET must be at least 0.
Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.

Alternative or Complementary approaches

Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.

References

Semiconductor device — Wikipedia contributors

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