Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.

Germanium fraction x

Required number.

The cited overview of Semiconductor device supplies background for the terminology and domain context used by this tool.^[1]

Compute in-plane compressive strain of a fully pseudomorphic SiGe layer on silicon relative to the relaxed SiGe lattice constant from Vegard's law. Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.

Pseudomorphic strain (%)

Returned number in %.

• Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
• Germanium fraction x must be at least 0.
• Germanium fraction x must be no greater than 1.
• Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.

Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.

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  Compute relaxed SiGe lattice mismatch relative to silicon using Vegard's law with aGe = 5.658 angstrom and aSi = 5.431 angstrom.

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  Compute equivalent oxide thickness of a high-K gate dielectric relative to silicon dioxide.