Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.

Mole fraction x

Required number.

Compound A lattice constant (Å)

Required number in Å.

Compound B lattice constant (Å)

Required number in Å.

The cited overview of Semiconductor device supplies background for the terminology and domain context used by this tool.^[1]

Interpolate the lattice constant of a binary alloy from its constituents using Vegard's law. Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.

Alloy lattice constant (Å)

Returned number in Å.

• Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
• Mole fraction x must be at least 0.
• Mole fraction x must be no greater than 1.
• Compound A lattice constant must be at least 5e-324.
• Compound B lattice constant must be at least 5e-324.
• Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.

Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.

• SiGe Lattice Mismatch Calculator

  Compute relaxed SiGe lattice mismatch relative to silicon using Vegard's law with aGe = 5.658 angstrom and aSi = 5.431 angstrom.

• Pseudomorphic SiGe Strain Calculator

  Compute in-plane compressive strain of a fully pseudomorphic SiGe layer on silicon relative to the relaxed SiGe lattice constant from Vegard's law.

• InP Lattice Constant Calculator

  Compute the InP lattice constant at a temperature using the 25 degrees Celsius reference value 5.869 angstrom and a documented thermal expansion coefficient of 4.56e-6 per kelvin.