Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.

Relative permittivity (ratio)

Required number in ratio.

Dielectric thickness (nm)

Required number in nm.

The cited overview of Semiconductor device supplies background for the terminology and domain context used by this tool.^[1]

Compute equivalent oxide thickness of a high-K gate dielectric relative to silicon dioxide. Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.

Equivalent oxide thickness (nm)

Returned number in nm.

• Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
• Relative permittivity must be at least 5e-324.
• Dielectric thickness must be at least 5e-324.
• Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.

Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.

• MOSFET SiO₂ Oxide Thickness Calculator

  Compute the equivalent SiO₂ gate oxide thickness from capacitance per unit area using εox = 3.9·ε0.

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  Compute ideal SiO₂ gate oxide capacitance per unit area from thickness using Cox = εox/tox and εox = 3.9·ε0.

• TSV Capacitance Calculator

  Estimate the cylindrical oxide capacitance of a through-silicon via from its radius, oxide thickness, height, and dielectric permittivity.