Semiconductor SiGe Quantum Well Strain Calculator
Audit independently measured in/out-of-plane SiGe well lattice strain against matched relaxed reference, not existing assumed fully pseudomorphic Vegard model.
Description
Measured SiGe well strain compares in-plane and out-of-plane lattice parameters with a matched relaxed reference.
Measured SiGe well strain compares in-plane and out-of-plane lattice parameters with a matched relaxed reference.1
Signed ratios distinguish expansion from compression.
When to use Semiconductor SiGe Quantum Well Strain Calculator
Use this tool when you need to reproduce the stated calculation from measured records or independently selected model inputs. Prepare measured device or specimen records under independently matched branch, temperature, frame, and unit conventions.
How to use Semiconductor SiGe Quantum Well Strain Calculator and understand its results
- Prepare measured device or specimen records under independently matched branch, temperature, frame, and unit conventions.
- Enter observedQuantumWellInPlaneLattice, callerMatchedRelaxedWellLattice, observedOutOfPlaneWellLattice, following the field table and rules below, then run the tool.
- Read signedMeasuredInPlaneWellStrains, signedMeasuredOutOfPlaneWellStrains. Use the output meanings below to interpret units, signs, flags, and any nested result fields.
- Correct reported input issues and run again. For a successful result, check the stated evidence coverage and assumptions before using it in your review.
| Input field | Meaning | Value type | Requirement |
|---|---|---|---|
| observedQuantumWellInPlaneLattice | Observed quantum well in plane lattice | list of number | Required |
| callerMatchedRelaxedWellLattice | Caller matched relaxed well lattice | list of number | Required |
| observedOutOfPlaneWellLattice | Observed out of plane well lattice | list of number | Required |
Use aligned nonempty positive in-plane, out-of-plane, and relaxed lattice parameters in one length unit. Divide each measured parameter by the relaxed value and subtract one. No pseudomorphic or Vegard-law state is assumed.
strain_parallel=a_parallel/a_relaxed−1; strain_perpendicular=a_perpendicular/a_relaxed−1 Symbols follow the input and output meanings and the calculation rules above.
| Output field | Meaning | Value type |
|---|---|---|
| signedMeasuredInPlaneWellStrains | Signed measured in plane well strains | list of number |
| signedMeasuredOutOfPlaneWellStrains | Signed measured out of plane well strains | list of number |
{
"input": {
"observedQuantumWellInPlaneLattice": [
5.4,
5.5
],
"callerMatchedRelaxedWellLattice": [
5.5,
5.5
],
"observedOutOfPlaneWellLattice": [
5.6,
5.5
]
},
"output": {
"signedMeasuredInPlaneWellStrains": [
-0.018181818181818077,
0
],
"signedMeasuredOutOfPlaneWellStrains": [
0.018181818181818077,
0
]
}
}Limitations and assumptions
Matched measurement branch, material state, calibration, and conventions must be independently established. Results do not certify device performance or operating conditions.
Missing required fields, unknown fields, wrong types, and violated calculation rules are input issues. Numeric values must be finite; nonfinite results are rejected. Evidence arrays must be dense, with no missing cells. Numeric observation lists allow at most 10,000 entries, subject to any smaller bounds stated above.
Alternative or Complementary methods
For a related review, use Semiconductor SiGe Critical Thickness Calculator: A relaxation-onset thickness can be read from matched SiGe trial data using a declared fraction criterion. All observed crossings remain visible instead of forcing one theoretical critical thickness. For a complementary step, use Semiconductor Shallow Trench Isolation Stress Calculator: A reduced elastic stiffness matrix maps three strain components to three stress components in a declared local convention. Its component and shear conventions must match the supplied strain vector.
References
Similar or alternative tools
- Semiconductor SiGe Critical Thickness Calculator
A relaxation-onset thickness can be read from matched SiGe trial data using a declared fraction criterion. All observed crossings remain visible instead of forcing one theoretical critical thickness.
- Semiconductor Shallow Trench Isolation Stress Calculator
A reduced elastic stiffness matrix maps three strain components to three stress components in a declared local convention. Its component and shear conventions must match the supplied strain vector.