Semiconductor SiGe Critical Thickness Calculator
Extract actual SiGe relaxation-onset thickness crossings from independent matched strain/stack trials, not existing Matthews–Blakeslee force-balance root or universal mismatch estimate.
Description
A relaxation-onset thickness can be read from matched SiGe trial data using a declared fraction criterion.
A relaxation-onset thickness can be read from matched SiGe trial data using a declared fraction criterion.1
All observed crossings remain visible instead of forcing one theoretical critical thickness.
When to use Semiconductor SiGe Critical Thickness Calculator
Use this tool when you need to locate all observed threshold crossings on a selected branch. Prepare measured device or specimen records under independently matched branch, temperature, frame, and unit conventions.
How to use Semiconductor SiGe Critical Thickness Calculator and understand its results
- Prepare measured device or specimen records under independently matched branch, temperature, frame, and unit conventions.
- Enter observedTestedLayerThicknessNm, observedRelaxationFractions, callerRelaxationOnsetFraction, following the field table and rules below, then run the tool.
- Read measuredCriticalThicknessCrossingsNm. Use the output meanings below to interpret units, signs, flags, and any nested result fields.
- Correct reported input issues and run again. For a successful result, check the stated evidence coverage and assumptions before using it in your review.
| Input field | Meaning | Value type | Requirement |
|---|---|---|---|
| observedTestedLayerThicknessNm | Observed tested layer thickness nm | list of number | Required |
| observedRelaxationFractions | Observed relaxation fractions | list of number | Required |
| callerRelaxationOnsetFraction | Caller relaxation onset fraction | number | Required |
Use at least two aligned coordinate and response samples with coordinates strictly increasing, plus the declared threshold. Record exact sample hits and interpolate each adjacent strict sign change relative to the threshold. Return all crossing coordinates in sample order, with duplicate adjacent coordinates removed. No crossing returns an empty list. A plateau exactly at the threshold returns its sampled positions rather than one unique crossing.
crossing=x_i+(x_(i+1)−x_i)×(level−y_i)/(y_(i+1)−y_i) for a strict sign change Symbols follow the input and output meanings and the calculation rules above.
Thickness coordinates must be positive; measured relaxation and criterion must be fractions in [0,1].
| Output field | Meaning | Value type |
|---|---|---|
| measuredCriticalThicknessCrossingsNm | Measured critical thickness crossings nm | list of number |
{
"input": {
"observedTestedLayerThicknessNm": [
10,
20,
30
],
"observedRelaxationFractions": [
0,
0.1,
0.5
],
"callerRelaxationOnsetFraction": 0.2
},
"output": {
"measuredCriticalThicknessCrossingsNm": [
22.5
]
}
}Limitations and assumptions
A supplied criterion defines these observed crossings. Multiple crossings, plateaus, and missing crossings are retained; the tool does not establish a unique device rating or recommend operating or test conditions.
Missing required fields, unknown fields, wrong types, and violated calculation rules are input issues. Numeric values must be finite; nonfinite results are rejected. Evidence arrays must be dense, with no missing cells. Numeric observation lists allow at most 10,000 entries, subject to any smaller bounds stated above.
Alternative or Complementary methods
For a related review, use Semiconductor SiGe Quantum Well Strain Calculator: Measured SiGe well strain compares in-plane and out-of-plane lattice parameters with a matched relaxed reference. Signed ratios distinguish expansion from compression. For a complementary step, use Semiconductor Retrograde Well Profile Calculator: A retrograde-well profile can be summarized by measured peak concentration, its depth ties, and contrast with a supplied reference depth. That reference must already represent the intended surface.
References
Similar or alternative tools
- Semiconductor SiGe Quantum Well Strain Calculator
Measured SiGe well strain compares in-plane and out-of-plane lattice parameters with a matched relaxed reference. Signed ratios distinguish expansion from compression.
- Semiconductor Retrograde Well Profile Calculator
A retrograde-well profile can be summarized by measured peak concentration, its depth ties, and contrast with a supplied reference depth. That reference must already represent the intended surface.