Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.

Germanium fraction x

Required number.

The cited overview of Band gap supplies background for the terminology and domain context used by this tool.^[1]

Estimate the 300 K indirect band gap of relaxed SiGe from germanium fraction using the lower of the delta- and L-valley composition fits. Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.

Band gap energy (eV)

Returned number in eV.

• Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
• Germanium fraction x must be at least 0.
• Germanium fraction x must be no greater than 1.
• Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.

Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.

• AlGaN Bandgap Calculator

  Compute the AlGaN band gap energy from the aluminum fraction using linear interpolation with a documented bowing parameter of 1.0 eV. Eg(x) = (1-x)*3.42 + x*6.25 - x*(1-x)*1.0.

• Effective DOS Calculator

  Estimate the conduction-band effective density of states from temperature using a 300 K reference of 2.8e19 per cubic centimeter. Formula: Nc(T) [cm^-3] = 2.8e19 · (T [K] / 300)^1.5. Input: 1 ≤ T ≤ 1000 K. Output: Nc > 0 cm^-3. Assumes parabolic band, temperature-independent effective mass, and the 300 K silicon conduction-band reference.

• GaAs/AlAs Band Offset Calculator

  Partition a GaAs/AlAs bandgap difference into conduction- and valence-band offsets using a supplied empirical offset fraction.