Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.

Band gap difference (eV)

Required number in eV.

Conduction-band offset fraction

Optional number. Empirical fraction of the bandgap difference assigned to the conduction-band offset.

The cited overview of Band gap supplies background for the terminology and domain context used by this tool.^[1]

Partition a GaAs/AlAs bandgap difference into conduction- and valence-band offsets using a supplied empirical offset fraction. Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.

Conduction band offset (eV)

Returned number in eV.

Valence band offset (eV)

Returned number in eV.

• Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
• Band gap difference must be at least 5e-324.
• Conduction-band offset fraction must be at least 5e-324.
• Conduction-band offset fraction must be no greater than 0.9999999999999998.
• Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.

Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.

• Heterojunction Band Offset Calculator

  Partition a heterojunction bandgap difference into conduction- and valence-band offsets using a material-specific empirical fraction.

• AlGaN Bandgap Calculator

  Compute the AlGaN band gap energy from the aluminum fraction using linear interpolation with a documented bowing parameter of 1.0 eV. Eg(x) = (1-x)*3.42 + x*6.25 - x*(1-x)*1.0.

• Semiconductor Effective Density Valence Band Calculator

  Compute the valence-band effective density of states from a density-of-states effective hole mass and temperature. Formula: Nv(T) = 2.51e19·(m*_dos/m0)^{3/2}·(T/300)^{3/2} cm⁻³, using the same unit-effective-mass prefactor as the conduction-band expression. Assumes a parabolic band and temperature-independent DOS effective mass.