Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.

Effective mass ratio

Optional number. Particle effective mass divided by the free-electron mass.

Level n (index)

Required integer in index. Quantum level index.

Well width (nm)

Required number in nm. Well width.

The cited overview of Quantum well supplies background for the terminology and domain context used by this tool.^[1]

Compute a particle's confinement energy above the bottom of an infinite quantum well from its level index, well width, and effective mass. Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.

Energy level (eV)

Returned number in eV. Confinement energy above the bottom of the infinite well.

• Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
• Level n must be at least 1.
• Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.

Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.

• Quantum Well Thickness from Energy

  Infer an infinite quantum well width from a confinement energy, level index, and particle effective mass.

• Fin Quantum Confinement Calculator

  Calculate the ground-state energy of one-dimensional confinement in an infinite square well using the fin width and carrier effective mass.

• WKB Tunneling Probability Calculator

  Estimate transmission through a rectangular barrier with the WKB approximation from the barrier energy above the particle, width, and effective mass.