Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.

Fin width (nm)

Required number in nm. Fin width treated as the width of an infinite square well.

Effective-mass ratio

Required number. Carrier effective mass divided by the free-electron mass.

The cited overview of Quantum tunnelling supplies background for the terminology and domain context used by this tool.^[1]

Calculate the ground-state energy of one-dimensional confinement in an infinite square well using the fin width and carrier effective mass. Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.

Confinement energy (meV)

Returned number in meV. Lowest infinite-well subband energy above the unconfined band edge.

• Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
• Fin width must be at least 5e-324.
• Effective-mass ratio must be at least 5e-324.
• Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.

Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.

• Cylindrical Nanowire Quantum Confinement Calculator

  Calculate the radial ground-state confinement energy of a circular hard-wall nanowire from its diameter and carrier effective mass using the first zero of J₀.

• Quantum Well Energy Level Calculator

  Compute a particle's confinement energy above the bottom of an infinite quantum well from its level index, well width, and effective mass.

• Quantum Well Thickness from Energy

  Infer an infinite quantum well width from a confinement energy, level index, and particle effective mass.