Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.

Stress time (h)

Required number in h. Cumulative duration of positive gate bias stress.

Temperature (K)

Required number in K. Device temperature during stress.

Prefactor (mV)

Required number in mV. Threshold shift prefactor at one hour of stress.

Activation energy (eV)

Required number in eV. Activation energy governing the Arrhenius acceleration.

Time exponent

Required number. Calibrated stress-time exponent applied to elapsed hours.

The cited overview of P–n junction supplies background for the terminology and domain context used by this tool.^[1]

Estimate the positive bias temperature instability threshold voltage shift from stress time and junction temperature using an Arrhenius power law. Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.

Threshold shift (mV)

Returned number in mV. Magnitude of the threshold voltage degradation.

• Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
• Stress time must be at least 0.
• Temperature must be at least 250.
• Temperature must be no greater than 450.
• Prefactor must be at least 5e-324.
• Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.

Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.

• NBTI Shift Calculator

  Estimate the negative bias temperature instability threshold voltage shift from stress time and junction temperature using an Arrhenius power law.

• BTI Threshold Shift Calculator

  Estimate bias temperature instability threshold shift as prefactor·t^{0.25}·exp((Ea/kB)·(1/300-1/T)). t is stress time in hours, T is temperature in K, Ea activation energy in eV, prefactor in mV.

• APD Breakdown Voltage Temperature Shift Calculator

  Shift an APD breakdown voltage to operating temperature using the linear temperature coefficient model V(T)=Vref·[1+0.0011·(T-25 °C)]. Valid for reference breakdown Vref>0 V defined at 25 °C and junction temperature T in [-55, 175] °C inclusive; outside this range the 0.11%/°C linear approximation degrades. Vref is the breakdown magnitude (positive, not signed). Result is the breakdown magnitude at temperature. Device-specific tempco may vary.