BTI Threshold Shift Calculator
Estimate bias temperature instability threshold shift as prefactor·t^{0.25}·exp((Ea/kB)·(1/300-1/T)). t is stress time in hours, T is temperature in K, Ea activation energy in eV, prefactor in mV.
Description
Estimate bias temperature instability threshold shift as prefactor·t^{0.25}·exp((Ea/kB)·(1/300-1/T)). t is stress time in hours, T is temperature in K, Ea activation energy in eV, prefactor in mV.
BTI Threshold Shift Calculator is a focused tool for the following task. Estimate bias temperature instability threshold shift as prefactor·t^{0.25}·exp((Ea/kB)·(1/300-1/T)). t is stress time in hours, T is temperature in K, Ea activation energy in eV, prefactor in mV. It reports Threshold shift from the values you provide rather than inventing measurements, coefficients, or professional judgment that are not part of the input.
When to use BTI Threshold Shift
Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.
- Stress time (h)
- Required number in h. Stress time. Must be at least 0 h; 0 yields 0 mV.
- Stress temperature (K)
- Required number in K. Stress temperature. Must be between 250 K and 450 K.
- Activation energy (eV)
- Optional number in eV. Activation energy. Must be at least 0 eV.
- Prefactor (mV)
- Optional number in mV. Prefactor at 300 K and 1 h. Must be at least 0 mV.
The cited overview of Semiconductor device supplies background for the terminology and domain context used by this tool.1
How BTI Threshold Shift works
Estimate bias temperature instability threshold shift as prefactor·t^{0.25}·exp((Ea/kB)·(1/300-1/T)). t is stress time in hours, T is temperature in K, Ea activation energy in eV, prefactor in mV. Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.
- Threshold shift (mV)
- Returned number in mV. Threshold voltage shift. Magnitude, positive.
Limitations and assumptions
- Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
- Stress time must be at least 0.
- Stress temperature must be at least 250.
- Stress temperature must be no greater than 450.
- Activation energy must be at least 0.
- Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.
Alternative or Complementary approaches
Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.
References
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Semiconductor device — Wikipedia contributors
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