Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.

Gate work fn (eV)

Required number in eV.

Semiconductor work fn (eV)

Required number in eV.

Qox (cm^-2)

Required number in cm^-2. Effective fixed oxide charge per cm².

Cox (fF/µm²)

Required number in fF/µm².

The cited overview of MOSFET supplies background for the terminology and domain context used by this tool.^[1]

Compute the flatband voltage from gate/semiconductor work functions and oxide charge. Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.

VFB (V)

Returned number in V. Flatband voltage.

• Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
• Cox must be at least 5e-324.
• Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.

Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.

• Work Function Difference Calculator

  Compute the metal-semiconductor work function difference from gate and substrate work functions.

• MOSFET SiO₂ Gate Oxide Capacitance Calculator

  Compute ideal SiO₂ gate oxide capacitance per unit area from thickness using Cox = εox/tox and εox = 3.9·ε0.

• MOSFET Inversion Charge Calculator

  Estimate the magnitude of the strong-inversion sheet charge from oxide capacitance and overdrive voltage using |Qinv| = Cox·Vov.