MOSFET SiO₂ Gate Oxide Capacitance Calculator

Compute ideal SiO₂ gate oxide capacitance per unit area from thickness using Cox = εox/tox and εox = 3.9·ε0.

Description

Compute ideal SiO₂ gate oxide capacitance per unit area from thickness using Cox = εox/tox and εox = 3.9·ε0.

MOSFET SiO₂ Gate Oxide Capacitance Calculator is a focused tool for the following task. Compute ideal SiO₂ gate oxide capacitance per unit area from thickness using Cox = εox/tox and εox = 3.9·ε0. It reports Cox from the values you provide rather than inventing measurements, coefficients, or professional judgment that are not part of the input.

When to use MOSFET SiO₂ Gate Oxide Capacitance

Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.

tox (nm)
Required number in nm. Average gate oxide thickness. Must be greater than 0 nm.

The cited overview of MOSFET supplies background for the terminology and domain context used by this tool.1

How MOSFET SiO₂ Gate Oxide Capacitance works

Compute ideal SiO₂ gate oxide capacitance per unit area from thickness using Cox = εox/tox and εox = 3.9·ε0. Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.

Cox (fF/µm²)
Returned number in fF/µm². Ideal parallel-plate SiO₂ gate capacitance per unit area.

Limitations and assumptions

  • Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
  • tox must be at least 5e-324.
  • Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.

Alternative or Complementary approaches

Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.

References

  1. MOSFET — Wikipedia contributors

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