Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.

Trigger current density (mA/um)

Required number in mA/um. Trigger current per micron of well width for the parasitic thyristor.

Effective well width (um)

Required number in um. Effective well width carrying the trigger current.

The cited overview of Semiconductor device supplies background for the terminology and domain context used by this tool.^[1]

Compute latch-up trigger current from trigger current per unit width and the effective conducting well width. Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.

Trigger current (mA)

Returned number in mA.

• Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
• Trigger current density must be at least 5e-324.
• Effective well width must be at least 5e-324.
• Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.

Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.

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