Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.

Holding current density (mA/um)

Required number in mA/um. Holding current per micron of well width for the parasitic thyristor.

Effective well width (um)

Required number in um. Effective well width carrying the latch-up current.

The cited overview of Semiconductor device supplies background for the terminology and domain context used by this tool.^[1]

Compute latch-up holding current from holding current per unit width and the effective conducting well width. Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.

Holding current (mA)

Returned number in mA.

• Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
• Holding current density must be at least 5e-324.
• Effective well width must be at least 5e-324.
• Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.

Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.

• Latch-Up Trigger Current Calculator

  Compute latch-up trigger current from trigger current per unit width and the effective conducting well width.

• Quantum Capacitance Calculator

  Compute the two-dimensional electron gas quantum capacitance per unit area from an effective mass.

• Quantum Well Energy Level Calculator

  Compute a particle's confinement energy above the bottom of an infinite quantum well from its level index, well width, and effective mass.