Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.

Output Conductance Siemens (S)

Required number in S.

The cited overview of JFET supplies background for the terminology and domain context used by this tool.^[1]

Small-signal JFET output resistance as the reciprocal of measured drain-output conductance at one bias point. Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.

Output Ohms (Ω)

Returned number in Ω.

• Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
• Output Conductance Siemens must be at least 0.
• Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.

Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.

• BJT Early Voltage Calculator

  Compute the BJT Early voltage as collector current divided by small-signal output conductance, VA = IC / go. IC is quiescent collector current in mA and go is dIC/dVCE in S.

• BJT Output Conductance Calculator

  Compute the BJT small-signal output conductance as collector current divided by Early voltage, go = IC / VA. IC is quiescent collector current in mA and VA is Early voltage in V.

• Diode Saturation Current Calculator

  Extract the positive Shockley saturation-current parameter from one forward-bias point using Is = I/[exp(V/(n·Vt))−1]. The logarithmic evaluation remains stable at high forward voltage. This parameter is not necessarily equal to a diode's measured reverse-leakage current.