Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.

Forward current (mA)

Required number in mA. Measured forward current. Must be greater than 0 mA.

Forward voltage (V)

Required number in V. Measured forward voltage. Must be greater than 0 V.

Ideality factor

Optional number. Diode ideality factor. Must be at least 1.

Temperature (K)

Optional number in K. Device temperature. Must be greater than 0 K.

The cited overview of P–n junction supplies background for the terminology and domain context used by this tool.^[1]

Extract the positive Shockley saturation-current parameter from one forward-bias point using Is = I/[exp(V/(n·Vt))−1]. The logarithmic evaluation remains stable at high forward voltage. This parameter is not necessarily equal to a diode's measured reverse-leakage current. Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.

Saturation current (pA)

Returned number in pA. Positive saturation-current parameter of the fitted Shockley equation.

• Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
• Forward current must be at least 5e-324.
• Forward voltage must be at least 5e-324.
• Ideality factor must be at least 1.
• Temperature must be at least 5e-324.
• Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.

Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.

• Diode Ideality Factor Calculator

  Extract the diode ideality factor n from two forward-bias points on the exponential Shockley relation. Formula: n = (V2 - V1) / (Vt·ln(I2/I1)), where thermal voltage Vt = k·T/q (k=1.380649e-23 J/K, q=1.602176634e-19 C). Inputs: I1>0 mA, I2>0 mA and I1≠I2, V1 and V2 finite V, T>0 K (default 300 K). Output: n>0 (physical diode typically 1 ≤ n ≤ 2; n=1 ideal diffusion, n≈2 recombination/generation; n outside 1-2 indicates series resistance, high injection, or measurement error). Assumes forward exponential region, negligible series resistance, and constant temperature.

• APD Breakdown Voltage Temperature Shift Calculator

  Shift an APD breakdown voltage to operating temperature using the linear temperature coefficient model V(T)=Vref·[1+0.0011·(T-25 °C)]. Valid for reference breakdown Vref>0 V defined at 25 °C and junction temperature T in [-55, 175] °C inclusive; outside this range the 0.11%/°C linear approximation degrades. Vref is the breakdown magnitude (positive, not signed). Result is the breakdown magnitude at temperature. Device-specific tempco may vary.

• BJT Base Width Modulation Calculator

  Quantify BJT base-width modulation (Early effect) from the reverse-biased collector-base junction: fractionalChange = (sqrt(Vbi+VCB)-sqrt(Vbi))·sqrt(2·εSi/(q·NA)) / Wb, with Vbi=builtInVoltageV>0 V, VCB=collectorBaseVoltageV>=0 V, NA=acceptorDopingPerCm3>0 cm^-3, Wb=baseWidthUm>0 um, εSi=11.7·ε0 F/cm, q=1.602e-19 C. Uses stable sqrt difference; checks total voltage finiteness and depletion-factor overflow. One-sided abrupt-junction approximation neglecting emitter side and non-uniform doping; valid for NA not too low and moderate VCB; result >=0, zero when VCB=0.