Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.

Projected range (nm)

Required number in nm. Mean depth of the implanted profile.

Straggle fraction

Required number. Straggle to projected range ratio for the ion and target material.

The cited overview of Semiconductor device supplies background for the terminology and domain context used by this tool.^[1]

Compute the ion implantation straggle as a fraction of the projected range. Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.

Straggle (nm)

Returned number in nm. Standard deviation of the implanted profile depth.

• Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
• Projected range must be at least 5e-324.
• Straggle fraction must be at least 5e-324.
• Straggle fraction must be no greater than 1.
• Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.

Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.

• Implant Projected Range Calculator

  Compute the ion implantation projected range by scaling the implant energy with a range coefficient.

• AlGaN Bandgap Calculator

  Compute the AlGaN band gap energy from the aluminum fraction using linear interpolation with a documented bowing parameter of 1.0 eV. Eg(x) = (1-x)*3.42 + x*6.25 - x*(1-x)*1.0.

• Anneal Activation Fraction Calculator

  Compute the fraction of dopant activated by an anneal from a first-order activation rate and anneal duration. Fraction = 1 - exp(-rate × time).