Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.

Intercept Volts (V)

Required number in V.

Current Amperes (A)

Required number in A.

Differential Ohms (Ω)

Required number in Ω.

The cited overview of Insulated-gate bipolar transistor supplies background for the terminology and domain context used by this tool.^[1]

Piecewise-linear IGBT on-state voltage estimate from intercept voltage and differential on-resistance at a given current. Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.

Conduction Volts (V)

Returned number in V.

• Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
• Intercept Volts must be at least 0.
• Current Amperes must be at least 0.
• Differential Ohms must be at least 0.
• Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.

Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.

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  Triangular-overlap estimate of IGBT turn-on switching energy from blocking voltage, current and measured overlap time.

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