Hole Mobility Calculator
Compute the silicon hole low-field mobility versus acceptor doping at 300 K (Caughey-Thomas).
Description
Compute the silicon hole low-field mobility versus acceptor doping at 300 K (Caughey-Thomas).
Hole Mobility Calculator is a focused tool for the following task. Compute the silicon hole low-field mobility versus acceptor doping at 300 K (Caughey-Thomas). It reports Hole mobility from the values you provide rather than inventing measurements, coefficients, or professional judgment that are not part of the input.
When to use Hole Mobility
Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.
- Na (cm^-3)
- Required number in cm^-3. Acceptor doping concentration.
The cited overview of Electron mobility supplies background for the terminology and domain context used by this tool.1
How Hole Mobility works
Compute the silicon hole low-field mobility versus acceptor doping at 300 K (Caughey-Thomas). Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.
- Hole mobility (cm^2/Vs)
- Returned number in cm^2/Vs. Hole mobility.
Limitations and assumptions
- Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
- Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.
Alternative or Complementary approaches
Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.
References
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Electron mobility — Wikipedia contributors
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- Doping Concentration From Resistivity Calculator
Estimate the dopant concentration from a measured silicon resistivity via bisection on Caughey–Thomas electron or hole mobility models. Mobility models: μ_n = 92+1268/(1+(N/1.3e17)^0.91) and μ_p = 54.3+406.9/(1+(N/2.35e17)^0.88) in cm²/V·s, resistivity ρ = 1/(q·μ·N) [Ω·cm] with q=1.602176634e-19 C. Bisection searches N in [1e12, 1e21] cm⁻³ for 200 iterations (geometric mid). Inputs: carrierType 'n' or 'p', ρ>0 Ω·cm. Output: N>0 cm⁻³. Assumes 300 K, complete ionization, and low-field mobility.