Electron Mobility Calculator
Compute the silicon electron low-field mobility versus donor doping at 300 K (Caughey-Thomas).
Description
Compute the silicon electron low-field mobility versus donor doping at 300 K (Caughey-Thomas).
Electron Mobility Calculator is a focused tool for the following task. Compute the silicon electron low-field mobility versus donor doping at 300 K (Caughey-Thomas). It reports Electron mobility from the values you provide rather than inventing measurements, coefficients, or professional judgment that are not part of the input.
When to use Electron Mobility
Use this semiconductor calculation for first-order device, material, fabrication, interconnect, packaging, or reliability estimates when every coefficient and unit convention is known.
- Nd (cm^-3)
- Required number in cm^-3. Donor doping concentration.
The cited overview of Electron mobility supplies background for the terminology and domain context used by this tool.1
How Electron Mobility works
Compute the silicon electron low-field mobility versus donor doping at 300 K (Caughey-Thomas). Inputs are interpreted exactly in the displayed units and the calculation returns the following fields without presentation rounding.
- Electron mobility (cm^2/Vs)
- Returned number in cm^2/Vs. Electron mobility.
Limitations and assumptions
- Material composition, geometry, process history, temperature, electric field, bias, interfaces, parasitics, and fitted parameter ranges can invalidate a compact semiconductor model.
- Use finite inputs in the displayed units, preserve source measurements and assumptions, and independently verify consequential decisions.
Alternative or Complementary approaches
Compare the estimate with measured process data, current device documentation, and a higher-fidelity circuit, field, thermal, quantum, or TCAD model when the decision requires it.
References
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Electron mobility — Wikipedia contributors
Similar or alternative tools
- Hole Mobility Calculator
Compute the silicon hole low-field mobility versus acceptor doping at 300 K (Caughey-Thomas).
- Conductivity From Doping Calculator
Compute the silicon conductivity of uniformly doped material from majority-carrier mobility at 300 K. Assumes low-field Caughey-Thomas mobility and complete ionization.
- Doping Concentration From Resistivity Calculator
Estimate the dopant concentration from a measured silicon resistivity via bisection on Caughey–Thomas electron or hole mobility models. Mobility models: μ_n = 92+1268/(1+(N/1.3e17)^0.91) and μ_p = 54.3+406.9/(1+(N/2.35e17)^0.88) in cm²/V·s, resistivity ρ = 1/(q·μ·N) [Ω·cm] with q=1.602176634e-19 C. Bisection searches N in [1e12, 1e21] cm⁻³ for 200 iterations (geometric mid). Inputs: carrierType 'n' or 'p', ρ>0 Ω·cm. Output: N>0 cm⁻³. Assumes 300 K, complete ionization, and low-field mobility.