Semiconductor Gan Hemt Current Collapse Calculator

Audit actual same-bias GaN current-collapse observation relative to unstressed current, negative enhancement retained; not dynamic resistance ratio or inferred trap lifetime.

Description

Current collapse compares post-stress drain current with a matched unstressed baseline.

Current collapse compares post-stress drain current with a matched unstressed baseline.^[1]

A signed loss fraction can reveal current enhancement as well as reduction.

When to use Semiconductor Gan Hemt Current Collapse Calculator

Use this tool when you need to calculate the stated measurement summary or conditional model from matched observations. Prepare independently matched device or specimen measurements, units, branch selection, and model or calibration conventions.

How to use Semiconductor Gan Hemt Current Collapse Calculator and understand its results

Prepare independently matched device or specimen measurements, units, branch selection, and model or calibration conventions.
Enter observedUnstressedMatchedDrainAmps, observedPostStressMatchedDrainAmps, following the field table and calculation rules below, then run the tool.
Read signedCurrentCollapseFractions. Use the output table and calculation rules below to interpret units, signs, crossings, and flags.
Correct any input issues and run again. Before using a successful result, review its units, signs, evidence coverage, and stated model or reference assumptions.

Input field	Meaning	Value type	Requirement
observedUnstressedMatchedDrainAmps	Observed unstressed matched drain amps	list of number	Required
observedPostStressMatchedDrainAmps	Observed post stress matched drain amps	list of number	Required

Use nonempty aligned lists with positive baseline currents and nonnegative post-stress currents. Return one minus post-stress current divided by baseline. Negative collapse fractions are accepted when the post-stress current is larger.

collapse_i=1−Ipost_i/Ibaseline_i

Read these symbols with the field meanings and branch or reference rules above.

Output field	Meaning	Value type
signedCurrentCollapseFractions	Signed current collapse fractions	list of number

json

{
  "input": {
    "observedUnstressedMatchedDrainAmps": [
      10,
      20
    ],
    "observedPostStressMatchedDrainAmps": [
      8,
      22
    ]
  },
  "output": {
    "signedCurrentCollapseFractions": [
      0.19999999999999996,
      -0.10000000000000009
    ]
  }
}

Limitations and assumptions

Measurements, branch identification, units, and model applicability must be independently established. Results do not supply universal material constants, a complete physical model, or operating-condition approval.

Missing required fields, unknown fields, wrong types, and violated calculation rules return input issues. Numeric values must be finite; nonfinite numeric outputs are rejected. Arrays must be dense, with no missing cells. Numeric lists allow at most 10000 entries, subject to smaller tool-specific bounds above.

Alternative or Complementary methods

For a related task, use Semiconductor Gan Hemt Dynamic Ron Calculator: Dynamic on-resistance measurements depend on matched bias and stress-to-read timing. Reporting the ratio and signed excess keeps both degradation and reduced resistance visible in GaN HEMT records. For a complementary step, use Semiconductor MESFET Transconductance Calculator: Transconductance is the local rate of drain-current change with gate voltage on a matched transistor branch. A measured MESFET trace supplies that slope without assuming a saturation-current parameter model.

References

Semiconductor Gan Hemt Current Collapse Calculator — tool.io

Similar or alternative tools

Semiconductor Gan Hemt Dynamic Ron Calculator
Dynamic on-resistance measurements depend on matched bias and stress-to-read timing. Reporting the ratio and signed excess keeps both degradation and reduced resistance visible in GaN HEMT records.
Semiconductor MESFET Transconductance Calculator
Transconductance is the local rate of drain-current change with gate voltage on a matched transistor branch. A measured MESFET trace supplies that slope without assuming a saturation-current parameter model.